Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
نویسندگان
چکیده
Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 μm InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 μm associated to a threshold current density as low as 820 A/cm2 for a six InAs QD stacked layers. Finally, a rate equation † Previously at Laboratoire d’Etude des Nanostructures à Semiconducteurs ha l-0 00 84 88 6, v er si on 1 22 J un 2 01 0 Author manuscript, published in "Optical and Quantum Electronics 38 (2006) 369-379" DOI : 10.1007/s11082-006-0037-2
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تاریخ انتشار 2010