Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

نویسندگان

  • K. Veselinov
  • F. Grillot
  • P. Miska
  • E. Homeyer
  • P. Caroff
  • A. Ramdane
چکیده

Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 μm InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 μm associated to a threshold current density as low as 820 A/cm2 for a six InAs QD stacked layers. Finally, a rate equation † Previously at Laboratoire d’Etude des Nanostructures à Semiconducteurs ha l-0 00 84 88 6, v er si on 1 22 J un 2 01 0 Author manuscript, published in "Optical and Quantum Electronics 38 (2006) 369-379" DOI : 10.1007/s11082-006-0037-2

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Analysis of carriers dynamics and laser emission in 1.55 m InAs/InP(113)B quantum dot lasers

Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into accou...

متن کامل

Carrier relaxation dynamics in InAs/InP quantum dots

The electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emitting around 1.55 μm are investigated. The carrier dynamics in QDs is studied by non-resonant timeresolved photoluminescence (tr-PL) experiments. This analysis reveals the QD electronic structure and the transient filling of the confined QD levels. Under low excitation densities, the spontaneous exciton lifetime is est...

متن کامل

Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers

The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derive...

متن کامل

InAs/InP(100) quantum dot laser with high wavelength stability

Introduction: The lasing wavelength of a semiconductor laser inevitably changes with varying the operation temperature, which is, however, not desirable for applications requiring specific and stable light wavelength. Thus, laser diodes with wavelength insensitive to temperature are fascinating and can drastically ease the critical requirements on precise temperature control. The quantum dot (Q...

متن کامل

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

Articles you may be interested in MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers Appl. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature Appl.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2010